highpowersemiconductorlasers相关论文
为了在热仿真时得到可靠的有源层温度分布,采用基于芯片封装结构原型的808 nm高功率半导体激光器单管有限元模型,引入条型区、热沉覆......
A very highly efficient InGaAlAs/AlGaAs quantum-well structure was designed for 808 nm emission,and laser diode chips 39......